MBR40H100WT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
TC
= 148
°C, per Diode
TC
= 150
°C, per Device
IF(AV)
20
40
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz) TC
= 144
°C
IFRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
WAVAL
400
mJ
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance?
Junction
?to?Case
?
Junction
?to?Ambient (Socket Mounted)
RJC
RJA
0.58
32
°C/W
ELECTRICAL CHARACTERISTICS
Characterisitc
Symbol
Min
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
(IF
= 20 A, T
J
= 25
°C)
(IF
= 20 A, T
J
= 125
°C)
(IF
= 40 A, T
J
= 25
°C)
(IF
= 40 A, T
J
= 125
°C)
vF
?
?
?
?
0.74
0.61
0.85
0.72
0.80
0.67
0.90
0.76
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ
= 125
°C)
(Rated dc Voltage, TJ
= 25
°C)
iR
?
?
2.0
0.0012
10
0.01
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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